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Transistor
2SD2358
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency output amplification Complementary to 2SB1538 s Features
* Low collector to emitter saturation voltage VCE(sat): < 0.15 V * Allowing supply with the radial taping
0.7
6.90.1 4.0
2.50.1 (0.8)
(1.0) (0.2) 4.50.1
0.65 max.
(1.0)
s Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating 10 10 5 1.2 1 1 150 -55 to +150
Unit V V V A A W C C
14.50.5
0.45+0.10 -0.05 2.50.5 2.50.5
1.050.05
0.45+0.10 -0.05
1
2
3
1: Emitter 2: Collector 3: Base MT-2-A1 Package
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion
s Electrical Characteristics Ta = 25C 3C
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 7 V, IE = 0 IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCE = 2 V, IC = 100 mA IC = 500 mA, IB = 20 mA VCB = 5 V, IE = -50 mA, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz 120 30 10 10 5 200 800 0.15 V MHz pF Min Typ Max 1 Unit A V V V
(0.5)
Publication date: April 2002
SJC00275AED
1
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2001 MAR

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